| Кількість | Ціна |
|---|---|
| 1+ | 587.45 грн |
| 10+ | 368.79 грн |
| 100+ | 244.03 грн |
| 500+ | 228.56 грн |
Відгуки про товар
Написати відгук
Технічний опис IXYA50N65C5 IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 650W, Case: D2PAK, Gate-emitter voltage: ±20V, Pulsed collector current: 240A, Mounting: SMD, Gate charge: 117nC, Kind of package: tube, Turn-off time: 170ns.
Інші пропозиції IXYA50N65C5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXYA50N65C5 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 650W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: SMD Gate charge: 117nC Kind of package: tube Turn-off time: 170ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYA50N65C5 |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
товару немає в наявності
В кошику
од. на суму грн.