IXYH12N250CV1HV IXYS
Виробник: IXYSDescription: IGBT 2500V 28A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
на замовлення 714 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1685.71 грн |
| 10+ | 1442.62 грн |
| 100+ | 1261.75 грн |
| 500+ | 1010.44 грн |
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Технічний опис IXYH12N250CV1HV IXYS
Description: IGBT 2500V 28A TO247HV, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 16 ns, Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A, Supplier Device Package: TO-247 (IXYH), Td (on/off) @ 25°C: 12ns/167ns, Switching Energy: 3.56mJ (on), 1.7mJ (off), Test Condition: 1250V, 12A, 10Ohm, 15V, Gate Charge: 56 nC, Part Status: Active, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 310 W.
Інші пропозиції IXYH12N250CV1HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXYH12N250CV1HV | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 12A Power dissipation: 310W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 56nC Kind of package: tube Turn-on time: 32ns Turn-off time: 333ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
товар відсутній |
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IXYH12N250CV1HV | Виробник : IXYS |
IGBT Modules IGBT XPT-HI VOLTAGE |
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IXYH12N250CV1HV | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 12A Power dissipation: 310W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 56nC Kind of package: tube Turn-on time: 32ns Turn-off time: 333ns Features of semiconductor devices: high voltage |
товар відсутній |