IXYH40N65B3D1 IXYS
Виробник: IXYSDescription: IGBT 650V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
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Технічний опис IXYH40N65B3D1 IXYS
Description: IGBT 650V 86A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 20ns/140ns, Switching Energy: 800µJ (on), 1.25mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 68 nC, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 195 A, Power - Max: 300 W.
Інші пропозиції IXYH40N65B3D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXYH40N65B3D1 | Виробник : IXYS |
IGBTs TO247 650V 40A GENX3 |
товару немає в наявності |
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IXYH40N65B3D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 195A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 57ns Turn-off time: 350ns Technology: GenX3™; Planar; XPT™ |
товару немає в наявності |