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IXYH40N65C3D1

IXYH40N65C3D1 IXYS


IXYH(Q)40N65C3D1.pdf Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
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Технічний опис IXYH40N65C3D1 IXYS

Description: IGBT 650V 80A 300W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 120 ns, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 23ns/110ns, Switching Energy: 830µJ (on), 360µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 66 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 300 W.

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IXYH40N65C3D1 IXYH40N65C3D1 Виробник : IXYS littelfuse_discrete_igbts_xpt_ixy_40n65c3d1_datasheet.pdf.pdf Description: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N65C3D1 IXYH40N65C3D1 Виробник : IXYS media-3319072.pdf IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH40N65C3D1 IXYH40N65C3D1 Виробник : IXYS IXYH(Q)40N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
товар відсутній