IXYH90N65A5 IXYS
Виробник: IXYS
IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
| Кількість | Ціна |
|---|---|
| 1+ | 837.81 грн |
| 10+ | 597.64 грн |
| 120+ | 365.65 грн |
| 510+ | 364.96 грн |
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Технічний опис IXYH90N65A5 IXYS
Description: IGBT PT 650V 220A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 40ns/420ns, Switching Energy: 1.3mJ (on), 3.4mJ (off), Test Condition: 400V, 50A, 5Ohm, 15V, Gate Charge: 260 nC, Part Status: Active, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 650 W.
Інші пропозиції IXYH90N65A5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXYH90N65A5 | Виробник : IXYS |
Description: IGBT PT 650V 220A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 40ns/420ns Switching Energy: 1.3mJ (on), 3.4mJ (off) Test Condition: 400V, 50A, 5Ohm, 15V Gate Charge: 260 nC Part Status: Active Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 650 W |
товару немає в наявності |
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| IXYH90N65A5 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 90A; 650W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 260nC Turn-off time: 420ns Gate-emitter voltage: ±20V Power dissipation: 650W Collector current: 90A Pulsed collector current: 600A Collector-emitter voltage: 650V Type of transistor: IGBT |
товару немає в наявності |