IXYH90N65A5 IXYS
Виробник: IXYS
IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 833.59 грн |
| 10+ | 594.63 грн |
| 120+ | 363.81 грн |
| 510+ | 363.12 грн |
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Технічний опис IXYH90N65A5 IXYS
Description: IGBT PT 650V 220A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 40ns/420ns, Switching Energy: 1.3mJ (on), 3.4mJ (off), Test Condition: 400V, 50A, 5Ohm, 15V, Gate Charge: 260 nC, Part Status: Active, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 600 A, Power - Max: 650 W.
Інші пропозиції IXYH90N65A5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXYH90N65A5 | IXYS |
Description: IGBT PT 650V 220A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 40ns/420ns Switching Energy: 1.3mJ (on), 3.4mJ (off) Test Condition: 400V, 50A, 5Ohm, 15V Gate Charge: 260 nC Part Status: Active Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 650 W |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYH90N65A5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 90A; 650W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 260nC Turn-off time: 420ns Gate-emitter voltage: ±20V Power dissipation: 650W Collector current: 90A Pulsed collector current: 600A Collector-emitter voltage: 650V Type of transistor: IGBT |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| IXYH90N65A5 |
|
Виробник: IXYS
Description: IGBT PT 650V 220A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/420ns
Switching Energy: 1.3mJ (on), 3.4mJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 650 W
Description: IGBT PT 650V 220A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/420ns
Switching Energy: 1.3mJ (on), 3.4mJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 650 W
товару немає в наявності
В кошику
од. на суму грн.
| IXYH90N65A5 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 650W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 260nC
Turn-off time: 420ns
Gate-emitter voltage: ±20V
Power dissipation: 650W
Collector current: 90A
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 650W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 260nC
Turn-off time: 420ns
Gate-emitter voltage: ±20V
Power dissipation: 650W
Collector current: 90A
Pulsed collector current: 600A
Collector-emitter voltage: 650V
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.