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IXYK100N65B3D1 Littelfuse


ttelfuse_discrete_igbts_xpt_ixy_100n65b3d1_datasheet.pdf.pdf Виробник: Littelfuse
XPTTM 650V IGBT IXYK100N65B3D1
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Технічний опис IXYK100N65B3D1 Littelfuse

Description: IGBT 650V 225A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A, Supplier Device Package: TO-264, Td (on/off) @ 25°C: 29ns/150ns, Switching Energy: 1.27mJ (on), 2mJ (off), Test Condition: 400V, 50A, 3Ohm, 15V, Gate Charge: 168 nC, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 460 A, Power - Max: 830 W.

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IXYK100N65B3D1 IXYK100N65B3D1 Виробник : IXYS littelfuse_discrete_igbts_xpt_ixy_100n65b3d1_datasheet.pdf.pdf Description: IGBT 650V 225A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: TO-264
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 2mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
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IXYK100N65B3D1 IXYK100N65B3D1 Виробник : IXYS media-3322931.pdf IGBT Transistors Disc IGBT XPT-GenX3 TO-264(3)
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