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IXYK120N120B3 IXYS


media?resourcetype=datasheets&itemid=18553f1c-eef0-4d23-a446-4aba83b01353&filename=littelfuse_discrete_igbts_xpt_ixy_120n120b3_datasheet.pdf Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-264(3)
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
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Технічний опис IXYK120N120B3 IXYS

Description: DISC IGBT XPT-GENX3 TO-264(3), Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, Supplier Device Package: TO-264 (IXYK), IGBT Type: PT, Td (on/off) @ 25°C: 30ns/340ns, Switching Energy: 9.7mJ (on), 21.5mJ (off), Test Condition: 960V, 100A, 1Ohm, 15V, Gate Charge: 400 nC, Part Status: Active, Current - Collector (Ic) (Max): 320 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 800 A, Power - Max: 1500 W.

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IXYK120N120B3 IXYK120N120B3 Виробник : IXYS media-3319502.pdf IGBT Transistors IGBT XPT-GENX3
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