IXYN100N65B3D1 IXYS
Виробник: IXYS
Description: IGBT MOD 650V 185A 600W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 185 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V
Description: IGBT MOD 650V 185A 600W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 185 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис IXYN100N65B3D1 IXYS
Description: IGBT MOD 650V 185A 600W SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 185 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 600 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V.
Інші пропозиції IXYN100N65B3D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXYN100N65B3D1 | Виробник : IXYS |
 IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini |
товару немає в наявності |
||
 |
IXYN100N65B3D1 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 600W Case: SOT227B Semiconductor structure: single transistor Mechanical mounting: screw Gate-emitter voltage: ±20V Electrical mounting: screw Collector current: 100A Type of semiconductor module: IGBT Pulsed collector current: 490A Max. off-state voltage: 650V |
товару немає в наявності |