IXYN100N65B3D1 IXYS
Виробник: IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
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Технічний опис IXYN100N65B3D1 IXYS
Description: DISC IGBT XPT-GENX3 SOT-227UI(MI, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 185 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 600 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V.
Інші пропозиції IXYN100N65B3D1
| Фото | Назва | Виробник | Інформація |
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IXYN100N65B3D1 | Виробник : IXYS |
Description: DISC IGBT XPT-GENX3 SOT-227UI(MI Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 185 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 600 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V |
товар відсутній |
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| IXYN100N65B3D1 | Виробник : IXYS |
IGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini |
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IXYN100N65B3D1 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B Technology: GenX3™; XPT™ Collector current: 100A Power dissipation: 600W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 490A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |