IXYN75N65C3D1 IXYS
Виробник: IXYS
Description: IGBT 650V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
Description: IGBT 650V 150A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
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Технічний опис IXYN75N65C3D1 IXYS
Description: IGBT 650V 150A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: SOT-227B, Td (on/off) @ 25°C: 26ns/93ns, Switching Energy: 2mJ (on), 950µJ (off), Test Condition: 400V, 60A, 3Ohm, 15V, Gate Charge: 122 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 360 A, Power - Max: 600 W.
Інші пропозиції IXYN75N65C3D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXYN75N65C3D1 | Виробник : IXYS |
 IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini |
товару немає в наявності |
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IXYN75N65C3D1 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W Technology: GenX3™; XPT™ Power dissipation: 600W Case: SOT227B Max. off-state voltage: 650V Type of semiconductor module: IGBT Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 360A |
товару немає в наявності |