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Технічний опис IXYN75N65C3D1 IXYS
Category: IGBT modules, Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W, Technology: GenX3™; XPT™, Power dissipation: 600W, Case: SOT227B, Max. off-state voltage: 650V, Electrical mounting: screw, Semiconductor structure: single transistor, Gate-emitter voltage: ±20V, Collector current: 75A, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 360A.
Інші пропозиції IXYN75N65C3D1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
IXYN75N65C3D1 | IXYS |
IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini |
товару немає в наявності |
В кошику од. на суму грн. |
|
IXYN75N65C3D1 | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W Technology: GenX3™; XPT™ Power dissipation: 600W Case: SOT227B Max. off-state voltage: 650V Electrical mounting: screw Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 75A Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 360A |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYN75N65C3D1 |
![]() |
Виробник: IXYS
IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini
IGBTs Disc IGBT XPT-GenX3 SOT-227UI(mini
товару немає в наявності
В кошику
од. на суму грн.
| IXYN75N65C3D1 |
![]() |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 360A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: SOT227B
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 360A
товару немає в наявності
В кошику
од. на суму грн.





