IXYP15N65C3D1M IXYS
Виробник: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 57W
Case: TO220FP
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 36ns
Turn-off time: 122ns
Collector current: 9A
кількість в упаковці: 1 шт
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Технічний опис IXYP15N65C3D1M IXYS
Description: IGBT PT 650V 16A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 15ns/68ns, Switching Energy: 270µJ (on), 230µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 48 W.
Інші пропозиції IXYP15N65C3D1M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXYP15N65C3D1M | Виробник : IXYS |
Description: IGBT PT 650V 16A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 15ns/68ns Switching Energy: 270µJ (on), 230µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 48 W |
товару немає в наявності |
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IXYP15N65C3D1M | Виробник : IXYS |
IGBTs 650V/16A XPT IGBT C3 Copacked TO-220 |
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IXYP15N65C3D1M | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 57W Case: TO220FP Mounting: THT Gate charge: 19nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 80A Collector-emitter voltage: 650V Turn-on time: 36ns Turn-off time: 122ns Collector current: 9A |
товару немає в наявності |