IXYP20N120A4 IXYS
Виробник: IXYS
Description: IGBT PT 1200V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
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Технічний опис IXYP20N120A4 IXYS
Description: IGBT PT 1200V 80A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: TO-220 (IXYP), IGBT Type: PT, Td (on/off) @ 25°C: 12ns/275ns, Switching Energy: 3.6mJ (on), 2.75mJ (off), Test Condition: 960V, 20A, 10Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 135 A, Power - Max: 375 W.
Інші пропозиції IXYP20N120A4
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXYP20N120A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 375W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 135A Mounting: THT Gate charge: 46nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| IXYP20N120A4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.