Технічний опис IXYP20N120A4 Littelfuse
Description: IGBT DISCRETE TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: TO-220 (IXYP), IGBT Type: PT, Td (on/off) @ 25°C: 12ns/275ns, Switching Energy: 3.6mJ (on), 2.75mJ (off), Test Condition: 960V, 20A, 10Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 135 A, Power - Max: 375 W.
Інші пропозиції IXYP20N120A4
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IXYP20N120A4 | Виробник : IXYS |
Description: IGBT DISCRETE TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-220 (IXYP) IGBT Type: PT Td (on/off) @ 25°C: 12ns/275ns Switching Energy: 3.6mJ (on), 2.75mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 135 A Power - Max: 375 W |
товар відсутній |
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IXYP20N120A4 | Виробник : IXYS | IGBT Transistors IGBT DISCRETE |
товар відсутній |