IXYP20N65B3D1 IXYS
Виробник: IXYSDescription: IGBT PT 650V 58A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
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Технічний опис IXYP20N65B3D1 IXYS
Description: IGBT PT 650V 58A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: PT, Td (on/off) @ 25°C: 12ns/103ns, Switching Energy: 500µJ (on), 450µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 29 nC, Part Status: Active, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 108 A, Power - Max: 230 W.
Інші пропозиції IXYP20N65B3D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXYP20N65B3D1 | Виробник : IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP |
товару немає в наявності |
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IXYP20N65B3D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 108A Collector-emitter voltage: 650V Turn-on time: 39ns Gate charge: 29nC Turn-off time: 271ns |
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