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IXYP20N65C3D1M

IXYP20N65C3D1M IXYS

littelfuse-discrete-igbts-ixyp20n65c3d1m-datasheet?assetguid=0469b551-782a-4664-8cdb-21bd7e1ab323
Виробник: IXYS
Description: IGBT PT 650V 18A TO-220-3
Power - Max: 50 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 18 A
Part Status: Active
Gate Charge: 30 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Switching Energy: 430µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 19ns/80ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис IXYP20N65C3D1M IXYS

Description: IGBT PT 650V 18A TO-220-3, Power - Max: 50 W, Current - Collector Pulsed (Icm): 105 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 18 A, Part Status: Active, Gate Charge: 30 nC, Test Condition: 400V, 20A, 20Ohm, 15V, Switching Energy: 430µJ (on), 350µJ (off), Td (on/off) @ 25°C: 19ns/80ns, IGBT Type: PT, Supplier Device Package: TO-220-3, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Reverse Recovery Time (trr): 30 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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IXYP20N65C3D1M IXYP20N65C3D1M IXYS Littelfuse_Discrete_IGBTs_XPT_IXYP20N65C3D1M_Datasheet.PDF IGBTs 650V/18A XPT IGBT C3 Copacked TO-220
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IXYP20N65C3D1M IXYP20N65C3D1M IXYS IXYP20N65C3D1M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
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IXYP20N65C3D1M Littelfuse_Discrete_IGBTs_XPT_IXYP20N65C3D1M_Datasheet.PDF
IXYP20N65C3D1M
Виробник: IXYS
IGBTs 650V/18A XPT IGBT C3 Copacked TO-220
товару немає в наявності
В кошику  од. на суму  грн.
IXYP20N65C3D1M IXYP20N65C3D1M.pdf
IXYP20N65C3D1M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
товару немає в наявності
В кошику  од. на суму  грн.