| Кількість | Ціна |
|---|---|
| 2+ | 257.63 грн |
| 10+ | 165.79 грн |
| 100+ | 101.27 грн |
| 500+ | 95.64 грн |
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Технічний опис IXYP8N90C3 IXYS
Description: IGBT 900V 20A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 16ns/40ns, Switching Energy: 460µJ (on), 180µJ (off), Test Condition: 450V, 8A, 30Ohm, 15V, Gate Charge: 13.3 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 48 A, Power - Max: 125 W.
Інші пропозиції IXYP8N90C3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXYP8N90C3 | IXYS |
 Description: IGBT 900V 20A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXYP8N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Mounting: THT Case: TO220-3 Kind of package: tube Gate charge: 13.3nC Turn-on time: 39ns Turn-off time: 238ns Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 48A Power dissipation: 125W |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYP8N90C3 |
|
Виробник: IXYS
Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Description: IGBT 900V 20A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товару немає в наявності
В кошику
од. на суму грн.
| IXYP8N90C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
товару немає в наявності
В кошику
од. на суму грн.