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IXYR50N120C3D1

IXYR50N120C3D1 IXYS

littelfuse_discrete_igbts_xpt_ixyr50n120c3d1_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1200V 56A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
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Технічний опис IXYR50N120C3D1 IXYS

Description: IGBT 1200V 56A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A, Supplier Device Package: ISOPLUS247™, Td (on/off) @ 25°C: 28ns/133ns, Switching Energy: 3mJ (on), 1mJ (off), Test Condition: 600V, 50A, 5Ohm, 15V, Gate Charge: 142 nC, Current - Collector (Ic) (Max): 56 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 210 A, Power - Max: 290 W.

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IXYR50N120C3D1 IXYR50N120C3D1 IXYS Littelfuse_Discrete_IGBTs_XPT_IXYR50N120C3D1_Datasheet.PDF IGBTs ISOPLUS 1200V 32A DIODE
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IXYR50N120C3D1 IXYR50N120C3D1 IXYS IXYR50N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Case: PLUS247™
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
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IXYR50N120C3D1 Littelfuse_Discrete_IGBTs_XPT_IXYR50N120C3D1_Datasheet.PDF
IXYR50N120C3D1
Виробник: IXYS
IGBTs ISOPLUS 1200V 32A DIODE
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IXYR50N120C3D1 IXYR50N120C3D1.pdf
IXYR50N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 290W
Case: PLUS247™
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.