Технічний опис IXYT20N120C3D1HV Littelfuse
Description: IGBT 1200V 36A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 29 ns, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Supplier Device Package: TO-268HV (IXYT), Td (on/off) @ 25°C: 20ns/90ns, Switching Energy: 1.3mJ (on), 1mJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 53 nC, Part Status: Active, Current - Collector (Ic) (Max): 36 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 88 A, Power - Max: 230 W.
Інші пропозиції IXYT20N120C3D1HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXYT20N120C3D1HV | Виробник : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 17A Power dissipation: 230W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 88A Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs кількість в упаковці: 1 шт |
товару немає в наявності |
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IXYT20N120C3D1HV | Виробник : IXYS |
Description: IGBT 1200V 36A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-268HV (IXYT) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 1mJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 88 A Power - Max: 230 W |
товару немає в наявності |
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IXYT20N120C3D1HV | Виробник : IXYS |
IGBTs TO268 1200V 17A DIODE |
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IXYT20N120C3D1HV | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 17A Power dissipation: 230W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 88A Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
товару немає в наявності |