IXYT40N120A4HV IXYS
Виробник: IXYS
Description: IGBT PT 1200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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Технічний опис IXYT40N120A4HV IXYS
Description: IGBT PT 1200V 140A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A, Supplier Device Package: TO-268HV (IXYT), IGBT Type: PT, Td (on/off) @ 25°C: 22ns/204ns, Switching Energy: 2.3mJ (on), 3.75mJ (off), Test Condition: 600V, 32A, 5Ohm, 15V, Gate Charge: 90 nC, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 275 A, Power - Max: 600 W.
Інші пропозиції IXYT40N120A4HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
IXYT40N120A4HV | IXYS |
IGBTs TO268 1200V 40A XPT |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYT40N120A4HV | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV Type of transistor: IGBT Power dissipation: 600W Case: TO268HV Mounting: SMD Gate charge: 90nC Kind of package: tube Collector-emitter voltage: 1.2kV Collector current: 140A Pulsed collector current: 275A |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYT40N120A4HV |
![]() |
Виробник: IXYS
IGBTs TO268 1200V 40A XPT
IGBTs TO268 1200V 40A XPT
товару немає в наявності
В кошику
од. на суму грн.
| IXYT40N120A4HV |
![]() |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Collector current: 140A
Pulsed collector current: 275A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Collector current: 140A
Pulsed collector current: 275A
товару немає в наявності
В кошику
од. на суму грн.

