IXYT55N120A4HV IXYS

Description: IGBT PT 1200V 175A TO-268HV, Power - Max: 650 W, Current - Collector Pulsed (Icm): 350 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 175 A, Part Status: Active, Gate Charge: 110 nC, Test Condition: 600V, 40A, 5Ohm, 15V, Switching Energy: 2.3mJ (on), 5.3mJ (off), Td (on/off) @ 25°C: 23ns/300ns, IGBT Type: PT, Supplier Device Package: TO-268HV (IXYT), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A, Reverse Recovery Time (trr): 35 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.