IXYX110N120C4 LITTELFUSE
Виробник: LITTELFUSE
Description: LITTELFUSE - IXYX110N120C4 - IGBT, 310 A, 1.9 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.9V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.36kW
Bauform - Transistor: PLUS247
Dauerkollektorstrom: 310A
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
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Технічний опис IXYX110N120C4 LITTELFUSE
Description: IGBT 1200V 310A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 48 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 40ns/320ns, Switching Energy: 3.6mJ (on), 1.9mJ (off), Test Condition: 600V, 50A, 2Ohm, 15V, Gate Charge: 330 nC, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 740 A, Power - Max: 1360 W.
Інші пропозиції IXYX110N120C4
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXYX110N120C4 | IXYS |
Description: IGBT 1200V 310A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 40ns/320ns Switching Energy: 3.6mJ (on), 1.9mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 740 A Power - Max: 1360 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXYX110N120C4 | IXYS |
IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247 |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYX110N120C4 |
|
Виробник: IXYS
Description: IGBT 1200V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
Description: IGBT 1200V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
товару немає в наявності
В кошику
од. на суму грн.
| IXYX110N120C4 |
|
Виробник: IXYS
IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
товару немає в наявності
В кошику
од. на суму грн.