| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2273.64 грн |
| 10+ | 1794.20 грн |
| 120+ | 1349.62 грн |
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Технічний опис IXYX140N90C3 IXYS
Description: IGBT 900V 310A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 40ns/145ns, Switching Energy: 4.3mJ (on), 4mJ (off), Test Condition: 450V, 100A, 1Ohm, 15V, Gate Charge: 330 nC, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 840 A, Power - Max: 1630 W.
Інші пропозиції IXYX140N90C3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
IXYX140N90C3 | IXYS |
Description: IGBT 900V 310A PLUS247Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 40ns/145ns Switching Energy: 4.3mJ (on), 4mJ (off) Test Condition: 450V, 100A, 1Ohm, 15V Gate Charge: 330 nC Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1630 W |
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|
IXYX140N90C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 140A Power dissipation: 1.63kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 330nC Kind of package: tube Turn-on time: 122ns Turn-off time: 0.3µs |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYX140N90C3 |
![]() |
Виробник: IXYS
Description: IGBT 900V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
Description: IGBT 900V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
товару немає в наявності
В кошику
од. на суму грн.
| IXYX140N90C3 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
товару немає в наявності
В кошику
од. на суму грн.





