IXYX200N65B3 IXYS
Виробник: IXYS
Description: IGBT 650V 410A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
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Технічний опис IXYX200N65B3 IXYS
Description: IGBT 650V 410A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 108 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 60ns/370ns, Switching Energy: 5mJ (on), 4mJ (off), Test Condition: 400V, 100A, 0Ohm, 15V, Gate Charge: 340 nC, Current - Collector (Ic) (Max): 410 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 1100 A, Power - Max: 1560 W.
Інші пропозиції IXYX200N65B3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXYX200N65B3 | IXYS |
IGBTs PLUS247 650V 200A GENX3 |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IXYX200N65B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 200A Power dissipation: 1.56kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 1.1kA Mounting: THT Kind of package: tube Gate charge: 340nC Turn-on time: 170ns Technology: GenX3™; XPT™ Turn-off time: 700ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYX200N65B3 |
|
Виробник: IXYS
IGBTs PLUS247 650V 200A GENX3
IGBTs PLUS247 650V 200A GENX3
товару немає в наявності
В кошику
од. на суму грн.
| IXYX200N65B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.56kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mounting: THT
Kind of package: tube
Gate charge: 340nC
Turn-on time: 170ns
Technology: GenX3™; XPT™
Turn-off time: 700ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.56kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mounting: THT
Kind of package: tube
Gate charge: 340nC
Turn-on time: 170ns
Technology: GenX3™; XPT™
Turn-off time: 700ns
товару немає в наявності
В кошику
од. на суму грн.