Технічний опис J108,126 NXP Semiconductors
Description: JFET N-CH 25V TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V, Voltage - Breakdown (V(BR)GSS): 25 V, Supplier Device Package: TO-92-3, Part Status: Obsolete, Drain to Source Voltage (Vdss): 25 V, Power - Max: 400 mW, Resistance - RDS(On): 8 Ohms, Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA, Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 5 V.
Інші пропозиції J108,126
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
,TO-226_straightlead.jpg "J108,126") |
J108,126 | NXP USA Inc. |
 Description: JFET N-CH 25V TO92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-92-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 400 mW Resistance - RDS(On): 8 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. |
| J108,126 |
|
Виробник: NXP USA Inc.
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 400 mW
Resistance - RDS(On): 8 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 5 V
Description: JFET N-CH 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 400 mW
Resistance - RDS(On): 8 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 5 V
товару немає в наявності
В кошику
од. на суму грн.