Технічний опис J175,116 NXP Semiconductors
Description: JFET P-CH 30V TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS), Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: TO-92-3, Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Power - Max: 400 mW, Resistance - RDS(On): 125 Ohms, Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA, Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V.
Інші пропозиції J175,116
Фото | Назва | Виробник | Інформація |
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J175,116 | Виробник : NXP USA Inc. |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 400 mW Resistance - RDS(On): 125 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V |
товару немає в наявності |
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J175,116 | Виробник : NXP Semiconductors |
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товару немає в наявності |