JAN1N3613/TR Microchip Technology

Description: DIODE GEN PURP 600V 1A, Qualification: MIL-PRF-19500/228, Current - Reverse Leakage @ Vr: 100 µA @ 300 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Tape & Reel (TR).