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Технічний опис JAN1N4249 Microchip / Microsemi
Description: DIODE GEN PURP 1KV 1A AXIAL, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk.
Інші пропозиції JAN1N4249
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| JAN1N4249 | Semtech Corporation |
 Description: DIODE GEN PURP 1KV 1A AXIALPackage / Case: Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Supplier Device Package: Axial Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
JAN1N4249 | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A AXIAL Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 139 шт В кошику од. на суму грн. |
| JAN1N4249 |
|
Виробник: Semtech Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Package / Case: Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Description: DIODE GEN PURP 1KV 1A AXIAL
Package / Case: Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N4249 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: DIODE GEN PURP 1KV 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 139 шт
В кошику
од. на суму грн.