JAN1N5196US Microchip Technology
Виробник: Microchip Technology
Description: DIODE GP 225V 200MA A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Grade: Military
Qualification: MIL-PRF-19500/118
Description: DIODE GP 225V 200MA A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Grade: Military
Qualification: MIL-PRF-19500/118
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Технічний опис JAN1N5196US Microchip Technology
Description: DIODE GP 225V 200MA A SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: A, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 225 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 25 nA @ 225 V, Grade: Military, Qualification: MIL-PRF-19500/118.
Інші пропозиції JAN1N5196US
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| JAN1N5196US | Виробник : Microchip / Microsemi |
 Diodes - General Purpose, Power, Switching Signal or Computer Diode |
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