JAN1N5553 Microchip / Microsemi
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 844.55 грн |
| 10+ | 765.43 грн |
| 25+ | 638.33 грн |
| 100+ | 561.85 грн |
| 250+ | 534.59 грн |
| 500+ | 499.76 грн |
| 1000+ | 471.74 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
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Технічний опис JAN1N5553 Microchip / Microsemi
Description: DIODE GEN PURP 800V 3A AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Інші пропозиції JAN1N5553
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
JAN1N5553 | Microchip Technology |
 Description: DIODE GEN PURP 800V 3A AXIALPackaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 104 шт В кошику од. на суму грн. |
| JAN1N5553 | Semtech Corporation |
Description: DIODE GEN PURP 800V 5A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 92pF @ 5V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Axial Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| JAN1N5553 | MICROCHIP TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 9A; Ifsm: 100A; Ufmax: 1.3V; Ir: 1uA; 2us Mounting: THT Max. off-state voltage: 0.8kV Load current: 9A Max. load current: 9A Semiconductor structure: single diode Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 2µs Max. forward impulse current: 100A Max. forward voltage: 1.3V |
товару немає в наявності |
Мінімальне замовлення: 104 шт В кошику од. на суму грн. |
| JAN1N5553 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 104 шт
В кошику
од. на суму грн.
| JAN1N5553 |
|
Виробник: Semtech Corporation
Description: DIODE GEN PURP 800V 5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Axial
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N5553 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 9A; Ifsm: 100A; Ufmax: 1.3V; Ir: 1uA; 2us
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 9A
Max. load current: 9A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 2µs
Max. forward impulse current: 100A
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 9A; Ifsm: 100A; Ufmax: 1.3V; Ir: 1uA; 2us
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 9A
Max. load current: 9A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 2µs
Max. forward impulse current: 100A
Max. forward voltage: 1.3V
товару немає в наявності
Мінімальне замовлення: 104 шт
В кошику
од. на суму грн.