Технічний опис JAN1N5553 Microchip / Microsemi
Description: DIODE GEN PURP 800V 3A AXIAL, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: B, Axial, Packaging: Bulk.
Інші пропозиції JAN1N5553
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
JAN1N5553 | Microchip Technology |
 Description: DIODE GEN PURP 800V 3A AXIALCurrent - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: B, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 104 шт В кошику од. на суму грн. |
| JAN1N5553 | Semtech Corporation |
Description: DIODE GEN PURP 800V 5A AXIAL Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Supplier Device Package: Axial Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 92pF @ 5V, 1MHz Technology: Standard |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN1N5553 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Description: DIODE GEN PURP 800V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 104 шт
В кошику
од. на суму грн.
| JAN1N5553 |
|
Виробник: Semtech Corporation
Description: DIODE GEN PURP 800V 5A AXIAL
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Supplier Device Package: Axial
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Technology: Standard
Description: DIODE GEN PURP 800V 5A AXIAL
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Supplier Device Package: Axial
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Technology: Standard
товару немає в наявності
В кошику
од. на суму грн.