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Технічний опис JAN1N5811US Microchip / Microsemi
Description: DIODE GEN PURP 150V 6A B SQ-MELF, Qualification: MIL-PRF-19500/477, Grade: Military, Current - Reverse Leakage @ Vr: 5 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, SQ-MELF, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, B, Packaging: Bulk.
Інші пропозиції JAN1N5811US
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| JAN1N5811US | MICROSEMI |
 MELF/ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N5811кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
JAN1N5811US | Microchip Technology |
Description: DIODE GEN PURP 150V 6A B SQ-MELF Qualification: MIL-PRF-19500/477 Grade: Military Current - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, SQ-MELF Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 60pF @ 10V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, B Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| JAN1N5811US | Semtech Corporation |
Description: D MET 6A SFST 150V HR SM Packaging: Bulk Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN1N5811US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN1N5811US |
|
Виробник: Semtech Corporation
Description: D MET 6A SFST 150V HR SM
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Description: D MET 6A SFST 150V HR SM
Packaging: Bulk
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.