JAN1N6170US Microchip Technology
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 216.62V SQ-MELF
Qualification: MIL-PRF-19500/516
Grade: Military
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 216.62V
Voltage - Breakdown (Min): 135.38V
Bidirectional Channels: 1
Supplier Device Package: C, SQ-MELF
Voltage - Reverse Standoff (Typ): 114V
Current - Peak Pulse (10/1000µs): 6.94A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, C
Packaging: Bulk
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Технічний опис JAN1N6170US Microchip Technology
Description: TVS DIODE 114VWM 216.62V SQ-MELF, Qualification: MIL-PRF-19500/516, Grade: Military, Part Status: Active, Power Line Protection: No, Power - Peak Pulse: 1500W (1.5kW), Voltage - Clamping (Max) @ Ipp: 216.62V, Voltage - Breakdown (Min): 135.38V, Bidirectional Channels: 1, Supplier Device Package: C, SQ-MELF, Voltage - Reverse Standoff (Typ): 114V, Current - Peak Pulse (10/1000µs): 6.94A, Applications: General Purpose, Operating Temperature: -55°C ~ 175°C (TJ), Type: Zener, Mounting Type: Surface Mount, Package / Case: SQ-MELF, C, Packaging: Bulk.
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