JAN1N6472US/TR Microchip Technology
Виробник: Microchip TechnologyDescription: TVS DIODE 15VWM 26.5VC G-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 322A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: G-MELF (D-5C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.4V
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/552
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Технічний опис JAN1N6472US/TR Microchip Technology
Description: TVS DIODE 15VWM 26.5VC G-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, G, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 322A (8/20µs), Voltage - Reverse Standoff (Typ): 15V, Supplier Device Package: G-MELF (D-5C), Unidirectional Channels: 1, Voltage - Breakdown (Min): 16.4V, Voltage - Clamping (Max) @ Ipp: 26.5V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500/552.
Інші пропозиції JAN1N6472US/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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JAN1N6472US/TR | Виробник : Microsemi |
ESD Suppressors / TVS Diodes |
товару немає в наявності |