Технічний опис JAN1N6621US MICROSEMI
Description: DIODE GEN PURP 75V 200MA D-5A, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 200°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 75 V, Qualification: MIL-PRF-19500/116.
Інші пропозиції JAN1N6621US
| Фото | Назва | Виробник | Інформація |
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JAN1N6621US | Виробник : Microchip Technology |
Description: DIODE GEN PURP 75V 200MA D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V Qualification: MIL-PRF-19500/116 |
товару немає в наявності |
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JAN1N6621US | Виробник : Microchip / Microsemi | Rectifiers 440V UFR,FRR SQ SMT |
товару немає в наявності |