JAN1N6629U Microsemi Corporation
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 800V 1.4A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.4A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 800V 1.4A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.4A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: MIL-PRF-19500/590
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Технічний опис JAN1N6629U Microsemi Corporation
Description: DIODE GEN PURP 800V 1.4A D-5B, Packaging: Bulk, Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 1.4A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A, Current - Reverse Leakage @ Vr: 2 µA @ 800 V, Qualification: MIL-PRF-19500/590.