Продукція > MICROSEMI CORPORATION > JAN1N6631U
JAN1N6631U

JAN1N6631U Microsemi Corporation

1N6626US%2C1N6631US.pdf
Виробник: Microsemi Corporation
Description: DIODE STANDARD 1000V 1.4A D5B
Qualification: MIL-PRF-19500/590
Current - Reverse Leakage @ Vr: 4 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.4 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 1.4A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис JAN1N6631U Microsemi Corporation

Description: DIODE STANDARD 1000V 1.4A D5B, Qualification: MIL-PRF-19500/590, Current - Reverse Leakage @ Vr: 4 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.4 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: D-5B, Current - Average Rectified (Io): 1.4A, Technology: Standard, Reverse Recovery Time (trr): 60 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, E, Packaging: Bulk.