Технічний опис JAN1N6772R Microchip Technology
Description: DIODE GEN PURP 400V 8A TO257, Packaging: Bulk, Package / Case: TO-257-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Reverse Polarity, Capacitance @ Vr, F: 200pF @ 5V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-257, Grade: Military, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 320 V, Qualification: MIL-PRF-19500/645.
Інші пропозиції JAN1N6772R
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
JAN1N6772R | Виробник : Microchip Technology |
Description: DIODE GEN PURP 400V 8A TO257 Packaging: Bulk Package / Case: TO-257-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 200pF @ 5V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-257 Grade: Military Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 320 V Qualification: MIL-PRF-19500/645 |
товару немає в наявності |
||
JAN1N6772R | Виробник : Microchip / Microsemi |
![]() |
товару немає в наявності |