Jan2N1483 Microchip Technology
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO8
Packaging: Bulk
Package / Case: TO-233AA, TO-8-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.20V @ 75mA, 750A
Current - Collector Cutoff (Max): 15µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 750mA, 4V
Supplier Device Package: TO-8
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.75 W
Qualification: MIL-PRF-19500/180
Description: TRANS NPN 40V 3A TO8
Packaging: Bulk
Package / Case: TO-233AA, TO-8-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.20V @ 75mA, 750A
Current - Collector Cutoff (Max): 15µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 750mA, 4V
Supplier Device Package: TO-8
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.75 W
Qualification: MIL-PRF-19500/180
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Технічний опис Jan2N1483 Microchip Technology
Description: TRANS NPN 40V 3A TO8, Packaging: Bulk, Package / Case: TO-233AA, TO-8-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.20V @ 75mA, 750A, Current - Collector Cutoff (Max): 15µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 750mA, 4V, Supplier Device Package: TO-8, Grade: Military, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.75 W, Qualification: MIL-PRF-19500/180.
Інші пропозиції Jan2N1483
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| Jan2N1483 | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT Power BJT |
товару немає в наявності |