Технічний опис JAN2N2219 MOTOROLA
Description: TRANS NPN 30V 0.8A TO-39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39, Grade: Military, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/251.
Інші пропозиції JAN2N2219
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
JAN2N2219 | Microchip Technology |
 Description: TRANS NPN 30V 0.8A TO-39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW Qualification: MIL-PRF-19500/251 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| JAN2N2219 | Microchip / Microsemi |
Bipolar Transistors - BJT 30V 800mA 800mW NPN Small-Signal BJT THT |
товару немає в наявності |
В кошику од. на суму грн. | |
| JAN2N2219 | MICROCHIP TECHNOLOGY |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 800mA; 800mW; TO39 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.8A Power dissipation: 0.8W Case: TO39 Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. |
| JAN2N2219 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
Description: TRANS NPN 30V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN2N2219 |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT 30V 800mA 800mW NPN Small-Signal BJT THT
Bipolar Transistors - BJT 30V 800mA 800mW NPN Small-Signal BJT THT
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N2219 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 800mA; 800mW; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.8A
Power dissipation: 0.8W
Case: TO39
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 800mA; 800mW; TO39
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.8A
Power dissipation: 0.8W
Case: TO39
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 40 шт
В кошику
од. на суму грн.