Технічний опис JAN2N2222AUB Semicoa
Description: TRANS NPN 50V 0.8A UB, Packaging: Bulk, Package / Case: 3-SMD, Non-Standard, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/255.
Інші пропозиції JAN2N2222AUB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| JAN2N2222AUB | Виробник : MICROSEMI |
 UB/NPN SILICON SWITCHING TRANSISTOR 2N2222кількість в упаковці: 1 шт |
товару немає в наявності |
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JAN2N2222AUB | Виробник : Microchip Technology |
Description: TRANS NPN 50V 0.8A UB Packaging: Bulk Package / Case: 3-SMD, Non-Standard Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
товару немає в наявності |
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JAN2N2222AUB | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT 40V 800mA 500mW 3 Pin CER Small-Signal BJT |
товару немає в наявності |