Технічний опис JAN2N2432 MOTOROLA
Description: TRANS NPN 30V 0.1A TO18, Qualification: MIL-PRF-19500/313, Grade: Military, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: TO-18 (TO-206AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Operating Temperature: -65°C ~ 175°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk.
Інші пропозиції JAN2N2432
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
JAN2N2432 | Microchip Technology |
Description: TRANS NPN 30V 0.1A TO18Qualification: MIL-PRF-19500/313 Grade: Military Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Current - Collector Cutoff (Max): 10nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Operating Temperature: -65°C ~ 175°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN2N2432 | Microchip / Microsemi |
Bipolar Transistors - BJT BJTs |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN2N2432 |
![]() |
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Qualification: MIL-PRF-19500/313
Grade: Military
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 30V 0.1A TO18
Qualification: MIL-PRF-19500/313
Grade: Military
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N2432 |
![]() |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT BJTs
Bipolar Transistors - BJT BJTs
товару немає в наявності
В кошику
од. на суму грн.


