Технічний опис JAN2N2484 MOTOROLA
Description: TRANS NPN 60V 0.05A TO-18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 360 mW, Grade: Military, Qualification: MIL-PRF-19500/376.
Інші пропозиції JAN2N2484
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JAN2N2484 | Виробник : Microsemi |
 Trans GP BJT NPN 60V 0.05A 3-Pin TO-18 |
товару немає в наявності |
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JAN2N2484 | Виробник : Microchip Technology |
Trans GP BJT NPN 60V 0.05A 360mW 3-Pin TO-18 |
товару немає в наявності |
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JAN2N2484 | Виробник : Microchip Technology |
Description: TRANS NPN 60V 0.05A TO-18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/376 |
товару немає в наявності |