Технічний опис JAN2N2484UB Microchip Technology
Description: TRANS NPN 60V 0.05A UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V, Supplier Device Package: UB, Grade: Military, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 360 mW, Qualification: MIL-PRF-19500/376.
Інші пропозиції JAN2N2484UB
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
Jan2N2484UB | Виробник : Microchip Technology |
 Description: TRANS NPN 60V 0.05A UBPackaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Qualification: MIL-PRF-19500/376 |
товару немає в наявності |
|
| Jan2N2484UB | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT 60V 50mA 360mW 3-Pin CER NPN Small-Signal BJT |
товару немає в наявності |