Технічний опис JAN2N2605 MOTOROLA
Description: TRANS PNP 60V 0.03A TO-46-3, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: TO-46-3, Grade: Military, Current - Collector (Ic) (Max): 30 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 400 mW, Qualification: MIL-PRF-19500/354.
Інші пропозиції JAN2N2605
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
JAN2N2605 | Microchip Technology |
 Description: TRANS PNP 60V 0.03A TO-46-3Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-46-3 Grade: Military Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW Qualification: MIL-PRF-19500/354 |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN2N2605 | Microchip / Microsemi |
Bipolar Transistors - BJT 70V 30mA 400mW Small-Signal BJT THT |
товару немає в наявності |
В кошику од. на суму грн. | |
| JAN2N2605 | Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN2N2605 |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.03A TO-46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-46-3
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/354
Description: TRANS PNP 60V 0.03A TO-46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-46-3
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/354
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N2605 |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT 70V 30mA 400mW Small-Signal BJT THT
Bipolar Transistors - BJT 70V 30mA 400mW Small-Signal BJT THT
товару немає в наявності
В кошику
од. на суму грн.