Технічний опис JAN2N2904A Microsemi
Description: TRANS PNP 60V 0.6A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/290.
Інші пропозиції JAN2N2904A
| Фото | Назва | Виробник | Інформація |
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JAN2N2904A | Виробник : Microchip Technology |
 Description: TRANS PNP 60V 0.6A TO39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
товару немає в наявності |
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| JAN2N2904A | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |