JAN2N2906AUBC/TR Microchip Technology
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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Технічний опис JAN2N2906AUBC/TR Microchip Technology
Description: SMALL-SIGNAL BJT, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: UBC, Grade: Military, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/291.
Інші пропозиції JAN2N2906AUBC/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
JAN2N2906AUBC/TR | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |