Технічний опис JAN2N2907AUA/TR Microchip Technology
Description: TRANS PNP 60V 0.6A UA, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UA, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/291.
Інші пропозиції JAN2N2907AUA/TR
| Фото | Назва | Виробник | Інформація |
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Ціна |
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JAN2N2907AUA/TR | Виробник : Microchip Technology |
Description: TRANS PNP 60V 0.6A UA Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UA Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
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JAN2N2907AUA/TR | Виробник : Microchip / Microsemi |
 Bipolar Transistors - BJT 60V 600mA 500mW PNP Small-Signal BJT SMT TR |
товару немає в наявності |