JAN2N3019 Microchip / Microsemi
| Кількість | Ціна |
|---|---|
| 1+ | 836.00 грн |
| 10+ | 751.02 грн |
| 100+ | 606.81 грн |
| 250+ | 506.02 грн |
Відгуки про товар
Написати відгук
Технічний опис JAN2N3019 Microchip / Microsemi
Description: TRANS NPN 80V 1A TO-39, Qualification: MIL-PRF-19500/391, Grade: Military, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-39, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.