Технічний опис JAN2N3441 MOTOROLA
Description: TRANS NPN 140V 3A TO66, Grade: Military, Power - Max: 3 W, Voltage - Collector Emitter Breakdown (Max): 140 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: TO-66 (TO-213AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-213AA, TO-66-2, Packaging: Bulk, Qualification: MIL-PRF-19500/369.
Інші пропозиції JAN2N3441
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JAN2N3441 | Microchip Technology |
Description: TRANS NPN 140V 3A TO66Grade: Military Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: TO-66 (TO-213AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Bulk Qualification: MIL-PRF-19500/369 |
товару немає в наявності |
В кошику од. на суму грн. | |
| JAN2N3441 | Microchip / Microsemi |
Bipolar Transistors - BJT 140V 3A 3W NPN Power BJT THT |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN2N3441 |
![]() |
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Grade: Military
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Qualification: MIL-PRF-19500/369
Description: TRANS NPN 140V 3A TO66
Grade: Military
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Bulk
Qualification: MIL-PRF-19500/369
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N3441 |
![]() |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT 140V 3A 3W NPN Power BJT THT
Bipolar Transistors - BJT 140V 3A 3W NPN Power BJT THT
товару немає в наявності
В кошику
од. на суму грн.


