Jan2N3485A Microchip Technology
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO46
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Grade: Military
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/392
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Технічний опис Jan2N3485A Microchip Technology
Description: TRANS PNP 60V 0.6A TO46, Power - Max: 400 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 600 mA, Grade: Military, Supplier Device Package: TO-46, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk, Qualification: MIL-PRF-19500/392.
Інші пропозиції Jan2N3485A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| Jan2N3485A | Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| Jan2N3485A |
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Виробник: Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
товару немає в наявності
В кошику
од. на суму грн.

