Технічний опис JAN2N3767 Microsemi
Description: TRANS NPN 80V 4A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Supplier Device Package: TO-66 (TO-213AA), Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 25 W, Qualification: MIL-PRF-19500/518.
Інші пропозиції JAN2N3767
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JAN2N3767 | Виробник : Microchip Technology |
 Description: TRANS NPN 80V 4A TO66Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W Qualification: MIL-PRF-19500/518 |
товару немає в наявності |
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| JAN2N3767 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT 80V 4A NPN Power BJT THT |
товару немає в наявності |