Технічний опис JAN2N3997 MOTOROLA
Description: TRANS NPN 80V 10A TO111, Packaging: Bulk, Package / Case: TO-111-4, Stud, Mounting Type: Stud Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V, Supplier Device Package: TO-111, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Інші пропозиції JAN2N3997
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| JAN2N3997 | Виробник : Microchip Technology |
 Description: TRANS NPN 80V 10A TO111Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
товар відсутній |
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| JAN2N3997 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
товар відсутній |