Технічний опис JAN2N4033 MOTOROLA
Description: TRANS PNP 80V 1A TO39, Power - Max: 800 mW, Qualification: MIL-PRF-19500/512, Grade: Military, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.
Інші пропозиції JAN2N4033
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
JAN2N4033 | Microchip Technology |
Description: TRANS PNP 80V 1A TO39Power - Max: 800 mW Qualification: MIL-PRF-19500/512 Grade: Military Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| JAN2N4033 | Microchip / Microsemi |
Bipolar Transistors - BJT 80 V Small-Signal BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN2N4033 |
![]() |
Виробник: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Power - Max: 800 mW
Qualification: MIL-PRF-19500/512
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: TRANS PNP 80V 1A TO39
Power - Max: 800 mW
Qualification: MIL-PRF-19500/512
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN2N4033 |
![]() |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT 80 V Small-Signal BJT
Bipolar Transistors - BJT 80 V Small-Signal BJT
товару немає в наявності
В кошику
од. на суму грн.


