Технічний опис JAN2N4033 MOTOROLA
Description: TRANS PNP 80V 1A TO39, Power - Max: 800 mW, Qualification: MIL-PRF-19500/512, Grade: Military, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.
Інші пропозиції JAN2N4033
| Фото | Назва | Виробник | Інформація |
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JAN2N4033 | Виробник : Microchip Technology |
 Description: TRANS PNP 80V 1A TO39Power - Max: 800 mW Qualification: MIL-PRF-19500/512 Grade: Military Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
товару немає в наявності |
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| JAN2N4033 | Виробник : Microchip / Microsemi |
Bipolar Transistors - BJT 80 V Small-Signal BJT |
товару немає в наявності |